Semiconductor Semiconductor Introduces Silicon Carbide Diodes

In order to meet the stringent requirements of the latest efficiency (ENERGY STAR, 80Plus, European energy efficiency), power supply designers must consider the use of new power converter topologies and more efficient electronic components such as high voltage silicon carbide (SiC) diodes.

In order to meet the stringent requirements of the latest efficiency (ENERGY STAR, 80Plus, European energy efficiency), power supply designers must consider the use of new power converter topologies and more efficient electronic components such as high voltage silicon carbide (SiC) diodes.

KIA semiconductor SiC diode utilizes excellent physical properties of silicon carbide, its dynamic reverse recovery characteristics are four times better than silicon, and the forward conduction voltage VF is 15% lower than it.


In hard switching applications, such as high-end servers and communications power supplies, SiC diodes significantly reduce power consumption and are widely used. They are also increasingly being used in solar inverters, motor drives, uninterruptible power supplies (UPS) and electric vehicles (EV).


KIA Semiconductor introduced a full set of SiC diodes, the voltage range of 600 ~ 1700 V. These products offer a variety of packaging options, so that designers can be flexible to improve efficiency and reliability, speed up the pace of product market, cut costs.